MS2207
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 65V 1.09GHZ M216
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Microsemi Corporation's MS2207 RF BJT transistors offer unmatched reliability for critical communication systems. With optimized noise figures and power handling, they excel in cellular base stations, satellite receivers, and IoT devices. Their robust construction ensures longevity even in harsh environments. Ready to integrate top-tier components? Request a quote today and let us support your RF engineering goals!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 65V
- Frequency - Transition: 1.09GHz
- Noise Figure (dB Typ @ f): -
- Gain: 8dB
- Power - Max: 880W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
- Current - Collector (Ic) (Max): 24A
- Operating Temperature: 250°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: M216
- Supplier Device Package: M216
Related Products
Infineon Technologies
BFS 380L6 E6327
Microsemi Corporation
MS2608
Microsemi Corporation
MS2202
Microsemi Corporation
1000MA
Microsemi Corporation
TPR1000
CEL
NE85639-T1-R28-A
Central Semiconductor Corp
CP243-CM5943-WN
Microsemi Corporation
MS1015
Microsemi Corporation
DME400A
Microsemi Corporation