MS2215
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 55V 1.215GHZ M216
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Microsemi Corporation presents MS2215: The go-to RF BJT transistor for low-power, high-frequency designs. Its standout features like controlled beta variation and hermetic packaging make it a favorite among telecom engineers. From RFID readers to test equipment, versatility meets precision. Get started request samples or datasheets via our quick-response form!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 55V
- Frequency - Transition: 960MHz ~ 1.215GHz
- Noise Figure (dB Typ @ f): -
- Gain: 7.5dB
- Power - Max: 300W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
- Current - Collector (Ic) (Max): 16.5A
- Operating Temperature: 250°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: M216
- Supplier Device Package: M216
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