MS652S
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 16V 512MHZ M123
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Upgrade your RF designs with Microsemi Corporation's MS652S Bipolar Junction Transistors (BJT), engineered for precision and efficiency in high-frequency applications. Key features include high gain, fast switching, and thermal stability, suitable for amplifiers, oscillators, and RF modules. Whether for industrial or consumer electronics, these transistors deliver consistent performance. Interested? Submit an inquiry now to learn how MS652S can enhance your projects!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 16V
- Frequency - Transition: 450MHz ~ 512MHz
- Noise Figure (dB Typ @ f): -
- Gain: 10dB
- Power - Max: 25W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
- Current - Collector (Ic) (Max): 2A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: M123
- Supplier Device Package: M123
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