MSC1175M
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 65V 1.15GHZ M218
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Microsemi Corporation presents MSC1175M: The go-to RF BJT transistor for low-power, high-frequency designs. Its standout features like controlled beta variation and hermetic packaging make it a favorite among telecom engineers. From RFID readers to test equipment, versatility meets precision. Get started request samples or datasheets via our quick-response form!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 65V
- Frequency - Transition: 1.025GHz ~ 1.15GHz
- Noise Figure (dB Typ @ f): -
- Gain: 8dB
- Power - Max: 400W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
- Current - Collector (Ic) (Max): 12A
- Operating Temperature: 250°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: M218
- Supplier Device Package: M218