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MSCSM120AM042CD3AG

Microchip Technology
MSCSM120AM042CD3AG Preview
Microchip Technology
PM-MOSFET-SIC-SBD~-D3
$990.06
Available to order
Reference Price (USD)
1+
$990.06000
500+
$980.1594
1000+
$970.2588
1500+
$960.3582
2000+
$950.4576
2500+
$940.557
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: 2 N Channel (Phase Leg)
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
  • Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 6mA
  • Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V
  • Power - Max: 2.031kW (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: D3

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