MSCSM120AM11CT3AG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD~-SP3F
$409.54
Available to order
Reference Price (USD)
1+
$409.54000
500+
$405.4446
1000+
$401.3492
1500+
$397.2538
2000+
$393.1584
2500+
$389.063
Exquisite packaging
Discount
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The MSCSM120AM11CT3AG by Microchip Technology is a standout in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Engineered for excellence, these components offer unmatched reliability and performance. Features such as high voltage tolerance, low gate charge, and superior thermal management make them a preferred choice. Applications range from industrial automation to consumer electronics. Don t miss out on the opportunity to integrate MSCSM120AM11CT3AG into your systems contact us for more details and pricing.
Specifications
- Product Status: Active
- FET Type: 2 N Channel (Phase Leg)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 254A (Tc)
- Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
- Power - Max: 1.067kW (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP3F
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