MSCSM120AM31CTBL1NG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD-BL1
$175.84
Available to order
Reference Price (USD)
1+
$175.84000
500+
$174.0816
1000+
$172.3232
1500+
$170.5648
2000+
$168.8064
2500+
$167.048
Exquisite packaging
Discount
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The MSCSM120AM31CTBL1NG by Microchip Technology is a must-have in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Designed for high-performance applications, these components feature low RDS(on), high power density, and excellent reliability. They are widely used in automotive, aerospace, and industrial electronics. Let Microchip Technology s MSCSM120AM31CTBL1NG be the backbone of your next project contact us for more information and to place your order.
Specifications
- Product Status: Active
- FET Type: 2 N Channel (Phase Leg)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 79A
- Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
- Power - Max: 310W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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