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MSCSM120HM50CT3AG

Microchip Technology
MSCSM120HM50CT3AG Preview
Microchip Technology
PM-MOSFET-SIC-SBD~-SP3F
$191.83
Available to order
Reference Price (USD)
1+
$191.83000
500+
$189.9117
1000+
$187.9934
1500+
$186.0751
2000+
$184.1568
2500+
$182.2385
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: 4 N-Channel
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 2.7V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V
  • Power - Max: 245W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP3F

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