MSCSM170AM039CT6AG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD-SP3F
$1,373.57
Available to order
Reference Price (USD)
1+
$1373.57000
500+
$1359.8343
1000+
$1346.0986
1500+
$1332.3629
2000+
$1318.6272
2500+
$1304.8915
Exquisite packaging
Discount
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Discover high-performance MSCSM170AM039CT6AG from Microchip Technology, a leading solution in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are designed for efficiency and reliability, making them ideal for various electronic applications. Features include low power consumption, high switching speed, and excellent thermal stability. Perfect for power management, amplification, and switching circuits. Contact us today for a quote and let Microchip Technology s MSCSM170AM039CT6AG enhance your projects with superior quality and performance.
Specifications
- Product Status: Active
- FET Type: 2 N Channel (Phase Leg)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 523A (Tc)
- Rds On (Max) @ Id, Vgs: 5mOhm @ 270A, 20V
- Vgs(th) (Max) @ Id: 3.3V @ 22.5mA
- Gate Charge (Qg) (Max) @ Vgs: 1602nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 29700pF @ 1000V
- Power - Max: 2.4kW (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -