Shopping cart

Subtotal: $0.00

MSCSM170AM23CT1AG

Microchip Technology
MSCSM170AM23CT1AG Preview
Microchip Technology
PM-MOSFET-SIC-SBD-SP1F
$277.03
Available to order
Reference Price (USD)
1+
$277.03000
500+
$274.2597
1000+
$271.4894
1500+
$268.7191
2000+
$265.9488
2500+
$263.1785
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: 2 N Channel (Phase Leg)
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 1700V (1.7kV)
  • Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
  • Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V
  • Vgs(th) (Max) @ Id: 3.2V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V
  • Power - Max: 602W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -

Related Products

Rectron USA

RM4606S8

Fairchild Semiconductor

FDC6320C

Toshiba Semiconductor and Storage

SSM6P47NU,LF

Diodes Incorporated

DMC4015SSD-13

Vishay Siliconix

SQJ992EP-T1_GE3

Diodes Incorporated

DMN2024UTS-13

Vishay Siliconix

SQ1912AEEH-T1_GE3

Diodes Incorporated

DMG6898LSDQ-13

Micro Commercial Co

MCQ4953-TP

Top