MSCSM170HM12CAG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD-SP6C
$1,053.73
Available to order
Reference Price (USD)
1+
$1053.73000
500+
$1043.1927
1000+
$1032.6554
1500+
$1022.1181
2000+
$1011.5808
2500+
$1001.0435
Exquisite packaging
Discount
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The MSCSM170HM12CAG from Microchip Technology is a premium option in the Discrete Semiconductor Products category, specializing in Transistors - FETs, MOSFETs - Arrays. With advanced features such as high-frequency operation, low leakage current, and excellent ESD protection, these components are perfect for demanding electronic applications. Whether you re working on telecommunications, computing, or medical devices, MSCSM170HM12CAG offers the reliability you need. Contact us now to discuss how we can support your project requirements with Microchip Technology s cutting-edge solutions.
Specifications
- Product Status: Active
- FET Type: 4 N-Channel (Full Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 179A (Tc)
- Rds On (Max) @ Id, Vgs: 15mOhm @ 90A, 20V
- Vgs(th) (Max) @ Id: 3.2V @ 7.5mA
- Gate Charge (Qg) (Max) @ Vgs: 534nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 1000V
- Power - Max: 843W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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