MT3S111P(TE12L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
RF TRANS NPN 6V 8GHZ PW-MINI
$0.89
Available to order
Reference Price (USD)
1,000+
$0.38250
2,000+
$0.35700
5,000+
$0.33915
10,000+
$0.32513
25,000+
$0.31620
Exquisite packaging
Discount
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Toshiba Semiconductor and Storage's MT3S111P(TE12L,F) RF BJT transistors offer unmatched reliability for critical communication systems. With optimized noise figures and power handling, they excel in cellular base stations, satellite receivers, and IoT devices. Their robust construction ensures longevity even in harsh environments. Ready to integrate top-tier components? Request a quote today and let us support your RF engineering goals!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 6V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 1.25dB @ 1GHz
- Gain: 10.5dB
- Power - Max: 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PW-MINI
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