MT3S113(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
RF TRANS NPN 5.3V 12.5GHZ SMINI
$0.30
Available to order
Reference Price (USD)
3,000+
$0.28000
6,000+
$0.26600
15,000+
$0.25500
30,000+
$0.24800
Exquisite packaging
Discount
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Maximize signal clarity with MT3S113(TE85L,F) RF BJT transistors by Toshiba Semiconductor and Storage. Featuring low distortion and high linearity, these components are perfect for high-sensitivity applications like medical imaging equipment and military communications. Their compact design allows for easy integration without compromising performance. Don t miss out inquire now for bulk discounts and technical specifications!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 5.3V
- Frequency - Transition: 12.5GHz
- Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
- Gain: 11.8dB
- Power - Max: 800mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
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