MT3S113P(TE12L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
RF TRANS NPN 5.3V 7.7GHZ PW-MINI
$0.99
Available to order
Reference Price (USD)
1,000+
$0.42300
2,000+
$0.39480
5,000+
$0.37506
10,000+
$0.35955
25,000+
$0.34968
Exquisite packaging
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Simplify your RF design challenges with MT3S113P(TE12L,F) from Toshiba Semiconductor and Storage. These BJT transistors offer consistent hFE matching and low saturation voltage, essential for push-pull configurations and mixer circuits. Serving industries from marine navigation to renewable energy. Connect with our team we provide end-to-end support from selection to delivery!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 5.3V
- Frequency - Transition: 7.7GHz
- Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
- Gain: 10.5dB
- Power - Max: 1.6W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PW-MINI
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