MT3S16U(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
RF TRANS NPN 5V 4GHZ USM
$0.25
Available to order
Reference Price (USD)
3,000+
$0.10080
6,000+
$0.09576
15,000+
$0.09180
30,000+
$0.08928
75,000+
$0.08640
Exquisite packaging
Discount
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Toshiba Semiconductor and Storage presents MT3S16U(TE85L,F): The go-to RF BJT transistor for low-power, high-frequency designs. Its standout features like controlled beta variation and hermetic packaging make it a favorite among telecom engineers. From RFID readers to test equipment, versatility meets precision. Get started request samples or datasheets via our quick-response form!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 5V
- Frequency - Transition: 4GHz
- Noise Figure (dB Typ @ f): 2.4dB @ 1GHz
- Gain: 4.5dBi
- Power - Max: 100mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 1V
- Current - Collector (Ic) (Max): 60mA
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
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