MUN5112DW1T1G
onsemi

onsemi
TRANS PREBIAS 2PNP 50V SC88
$0.06
Available to order
Reference Price (USD)
1+
$0.06182
500+
$0.0612018
1000+
$0.0605836
1500+
$0.0599654
2000+
$0.0593472
2500+
$0.058729
Exquisite packaging
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onsemi's MUN5112DW1T1G represents the next generation of Pre-Biased Bipolar Transistor Arrays, combining efficiency with compact design. These surface-mount compatible components feature integrated bias networks that reduce part count while improving system reliability. Ideal applications encompass power management, sensor interfaces, and digital circuit amplification in medical equipment, robotics, and smart home systems. Notable advantages include consistent hFE matching, reduced board space requirements, and simplified inventory management. As a leading supplier of discrete semiconductors, onsemi guarantees quality and performance. Get competitive quotes and lead times inquire about MUN5112DW1T1G now!
Specifications
- Product Status: Active
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363