MUN5113DW1T1G
onsemi
onsemi
TRANS 2PNP PREBIAS 0.25W SOT363
$0.26
Available to order
Reference Price (USD)
9,000+
$0.03990
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Maximize circuit reliability with onsemi's MUN5113DW1T1G Pre-Biased Transistor Arrays, the smart choice for modern electronic designs. These BJT arrays combine multiple transistors with bias networks in single packages, offering space savings and improved thermal characteristics. Target applications span from portable electronics to industrial automation systems, particularly where stable amplification and fast switching are required. Key benefits include reduced component count, simplified assembly processes, and enhanced signal integrity. onsemi maintains strict quality control measures for all discrete semiconductor products. Interested in MUN5113DW1T1G specifications or evaluation boards? Complete our brief inquiry form for prompt response!
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Resistor - Base (R1): -
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- Frequency - Transition: -
- Power - Max: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Toshiba Semiconductor and Storage
RN4989FE,LXHF(CT
Diodes Incorporated
DCX123JUQ-7-F
Diodes Incorporated
DDA114EU-7-F
onsemi
SMUN5211T1
Rohm Semiconductor
UMD25NTR
Panasonic Electronic Components
XP0621500L
NXP USA Inc.
PBLS4004V,115
Diodes Incorporated
DDC123JU-7-F
onsemi
EMD5DXV6T5G
onsemi