MUN5116DW1T1
onsemi
onsemi
TRANS 2PNP PREBIAS 0.25W SOT363
$0.05
Available to order
Reference Price (USD)
1+
$0.05000
500+
$0.0495
1000+
$0.049
1500+
$0.0485
2000+
$0.048
2500+
$0.0475
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Select onsemi's MUN5116DW1T1 for superior Pre-Biased Transistor Array performance in demanding electronic environments. These BJT arrays deliver time-saving solutions with their integrated resistor networks and matched transistor characteristics. Ideal for audio amplifiers, level shifters, and digital logic interfaces in commercial and industrial equipment. Performance highlights include wide operating voltage ranges, excellent linearity, and resistance to thermal runaway. As a trusted semiconductor supplier, onsemi offers flexible packaging options and reliable delivery schedules. Whether you need samples or production quantities, begin by submitting your MUN5116DW1T1 inquiry our team awaits your requirements!
Specifications
- Product Status: Obsolete
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
Related Products
Nexperia USA Inc.
PUMD9,135
Rohm Semiconductor
UMH4NTN
Rohm Semiconductor
UMD12NTR
onsemi
NUS2401SNT1G
onsemi
MUN5315DW1T1G
Nexperia USA Inc.
PUMD13,115
Toshiba Semiconductor and Storage
RN1604(TE85L,F)
Panasonic Electronic Components
DMC564030R
Toshiba Semiconductor and Storage
RN1908,LXHF(CT
Nexperia USA Inc.