MUN5216DW1T1G
onsemi
onsemi
TRANS 2NPN PREBIAS 0.25W SOT363
$0.39
Available to order
Reference Price (USD)
3,000+
$0.04233
6,000+
$0.03701
15,000+
$0.03169
30,000+
$0.02991
75,000+
$0.02814
150,000+
$0.02518
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Introducing onsemi's MUN5216DW1T1G advanced Pre-Biased Transistor Arrays engineered for modern electronics. These BJT arrays provide ready-to-use solutions with internal resistor networks, significantly reducing design complexity and BOM costs. Application highlights include power supply circuits, display drivers, and microcontroller interfaces in automotive, aerospace, and industrial environments. Technical features comprise low VCE(sat), tight current gain matching, and RoHS compliance for environmental safety. onsemi stands behind every MUN5216DW1T1G unit with rigorous quality testing. Streamline your procurement process contact our sales team via the inquiry form for personalized assistance!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
Related Products
Nexperia USA Inc.
PBLS2022D,115
onsemi
NSBC114YDP6T5G
Toshiba Semiconductor and Storage
RN2707,LF
Nexperia USA Inc.
PUMD17,115
Diodes Incorporated
ADA114EUQ-7
Diodes Incorporated
DCX114EU-13R-F
onsemi
MUN5115DW1T1G
Rohm Semiconductor
UMH6NTR
Nexperia USA Inc.
PUMH9,115
Nexperia USA Inc.