MUN5312DW1T1G
onsemi
onsemi
TRANS PREBIAS NPN/PNP SOT363
$0.30
Available to order
Reference Price (USD)
1+
$0.30000
500+
$0.297
1000+
$0.294
1500+
$0.291
2000+
$0.288
2500+
$0.285
Exquisite packaging
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Upgrade to onsemi's premium MUN5312DW1T1G BJT Arrays for unmatched performance in discrete semiconductor applications. These pre-biased transistor pairs deliver consistent results in amplification and switching tasks, featuring optimized base-emitter resistors for immediate circuit integration. Perfect for use in voltage regulators, relay drivers, and signal conditioning circuits within consumer electronics and embedded systems. The product line boasts high power dissipation, wide operating temperature ranges, and moisture-resistant packaging. As an industry leader, onsemi provides technical documentation and design support for all MUN5312DW1T1G applications. Start your order process submit an inquiry to receive customized solutions!
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
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