MUN5314DW1T1G
onsemi
onsemi
TRANS PREBIAS 1NPN 1PNP 50V SC88
$0.26
Available to order
Reference Price (USD)
3,000+
$0.04760
6,000+
$0.04161
15,000+
$0.03563
30,000+
$0.03363
75,000+
$0.03164
150,000+
$0.02831
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
onsemi presents the MUN5314DW1T1G series innovative Pre-Biased BJT Arrays redefining compact circuit solutions. These transistor arrays feature carefully matched parameters and integrated biasing for plug-and-play functionality in diverse applications. Typical uses include interface circuits between different logic families, LED matrix control, and power management in IoT devices. Engineering advantages comprise low noise operation, high current capability, and excellent batch-to-batch consistency. With onsemi's global supply chain support, you'll never face stock shortages. Get detailed product information and volume discounts send your MUN5314DW1T1G inquiry today and our experts will assist you!
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
Related Products
Toshiba Semiconductor and Storage
RN4988,LXHF(CT
Rohm Semiconductor
UMD5NTR
Diodes Incorporated
DCX124EUQ-7-F
Nexperia USA Inc.
PUMF11,115
Nexperia USA Inc.
PEMD9,115
Toshiba Semiconductor and Storage
RN2908FE,LXHF(CT
Nexperia USA Inc.
PUMB3,115
Rohm Semiconductor
IMD10AT108
Diodes Incorporated
ACX114YUQ-13R
Toshiba Semiconductor and Storage