MURTA200120R
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE GEN 1.2KV 100A 3 TOWER
$145.32
Available to order
Reference Price (USD)
18+
$104.63222
Exquisite packaging
Discount
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Experience unparalleled performance with the MURTA200120R from GeneSiC Semiconductor, a key player in the Diodes - Rectifiers - Arrays segment of Discrete Semiconductor Products. These diodes are engineered for precision and durability, offering features such as fast recovery time and high current density. The MURTA200120R is perfect for applications requiring reliable rectification and array configurations. GeneSiC Semiconductor ensures every product meets stringent quality controls. Contact us today to request a sample or to discuss bulk purchase options!
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io) (per Diode): 100A
- Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 100 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
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