MURTA600120R
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE GEN 1.2KV 300A 3 TOWER
$207.42
Available to order
Reference Price (USD)
18+
$139.17111
Exquisite packaging
Discount
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Upgrade your electronic projects with the MURTA600120R by GeneSiC Semiconductor, a top-tier option in the Diodes - Rectifiers - Arrays segment of Discrete Semiconductor Products. Known for their durability and superior performance, these diodes are perfect for demanding applications. The MURTA600120R offers fast switching, low forward voltage, and high surge capability, making it suitable for power management and signal processing. Trust GeneSiC Semiconductor for components that meet the highest industry standards. Reach out now to learn more and place your order!
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io) (per Diode): 300A
- Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 300 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
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