Shopping cart

Subtotal: $0.00

ND350N12KHPSA1

Infineon Technologies
ND350N12KHPSA1 Preview
Infineon Technologies
DIODE GP 1.2KV 350A BG-PB50ND-1
$177.90
Available to order
Reference Price (USD)
3+
$119.27667
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Last Time Buy
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 350A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: BG-PB50ND-1
  • Operating Temperature - Junction: -40°C ~ 135°C

Related Products

Solid State Inc.

1N1204RA

Vishay General Semiconductor - Diodes Division

SS23HM3_A/H

Vishay General Semiconductor - Diodes Division

VS-SD300C08C

Comchip Technology

ACGRC302-HF

Microchip Technology

JAN1N5415/TR

Panjit International Inc.

MBR215AFC_R1_00001

Vishay General Semiconductor - Diodes Division

VS-240U60DM16

Taiwan Semiconductor Corporation

ES1JFS

Yangzhou Yangjie Electronic Technology Co.,Ltd

G1J-F1-3000HF

Microchip Technology

1N5802US

Top