NDBA100N10BT4H
onsemi
onsemi
MOSFET N-CH 100V 100A D2PAK
$0.89
Available to order
Reference Price (USD)
1+
$0.89000
500+
$0.8811
1000+
$0.8722
1500+
$0.8633
2000+
$0.8544
2500+
$0.8455
Exquisite packaging
Discount
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NDBA100N10BT4H by onsemi is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, NDBA100N10BT4H ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
- Rds On (Max) @ Id, Vgs: 6.9mOhm @ 50A, 15V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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