Shopping cart

Subtotal: $0.00

NDD03N60ZT4G

onsemi
NDD03N60ZT4G Preview
onsemi
MOSFET N-CH 600V 2.6A DPAK
$0.29
Available to order
Reference Price (USD)
1+
$0.29000
500+
$0.2871
1000+
$0.2842
1500+
$0.2813
2000+
$0.2784
2500+
$0.2755
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 61W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Related Products

Infineon Technologies

IPA65R600E6XKSA1

NXP USA Inc.

PMN52XP115

Fairchild Semiconductor

FQP11N50CF

Vishay Siliconix

SI4401BDY-T1-E3

Vishay Siliconix

SIR882BDP-T1-RE3

Texas Instruments

CSD25481F4

Infineon Technologies

IPP80R360P7XKSA1

Infineon Technologies

IRFI1310NPBF

Diodes Incorporated

ZXM61N03FTA

Renesas Electronics America Inc

NP20P04SLG-E1-AY

Top