NE3510M04-T2-A
Renesas Electronics America Inc
Renesas Electronics America Inc
SMALL SIGNAL N-CHANNEL MOSFET
$0.83
Available to order
Reference Price (USD)
1+
$0.83000
500+
$0.8217
1000+
$0.8134
1500+
$0.8051
2000+
$0.7968
2500+
$0.7885
Exquisite packaging
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Discover high-performance NE3510M04-T2-A RF MOSFETs from Renesas Electronics America Inc, designed for superior signal amplification in demanding applications. These transistors feature low noise, high gain, and excellent thermal stability, making them ideal for RF and microwave circuits. Commonly used in communication systems, radar, and wireless infrastructure, our FETs ensure reliable performance in critical environments. Contact us today for pricing and technical support let s power your next project together!
Specifications
- Product Status: Obsolete
- Transistor Type: HFET
- Frequency: 4GHz
- Gain: 16dB
- Voltage - Test: 2 V
- Current Rating (Amps): 97mA
- Noise Figure: 0.45dB
- Current - Test: 15 mA
- Power - Output: -
- Voltage - Rated: 4 V
- Package / Case: SOT-343F
- Supplier Device Package: M04
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