NE3515S02-T1C-A
Renesas
Renesas
SUPER LOW NOISE PSEUDOMORPHIC HJ
$2.80
Available to order
Reference Price (USD)
1+
$2.80000
500+
$2.772
1000+
$2.744
1500+
$2.716
2000+
$2.688
2500+
$2.66
Exquisite packaging
Discount
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Renesas delivers precision with the NE3515S02-T1C-A RF MOSFET family, optimized for low-voltage/high-current scenarios. Perfect for automotive radar and IoT connectivity modules, they provide stable operation across temperature extremes. Each unit undergoes strict validation protocols. Need samples? Submit your request and we ll expedite your evaluation process!
Specifications
- Product Status: Last Time Buy
- Transistor Type: HFET
- Frequency: 12GHz
- Gain: 12.5dB
- Voltage - Test: 2 V
- Current Rating (Amps): 88mA
- Noise Figure: 0.3dB
- Current - Test: 10 mA
- Power - Output: -
- Voltage - Rated: 4 V
- Package / Case: 4-Micro-X
- Supplier Device Package: 4-Micro-X
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