NE462M02-T1-AZ
CEL
CEL
RF TRANS NPN 12V 6GHZ SOT89
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Discover high-performance NE462M02-T1-AZ RF Bipolar Transistors from CEL, designed for superior signal amplification in demanding applications. These transistors feature excellent high-frequency response, low noise, and reliable performance, making them ideal for RF and microwave circuits. Commonly used in communication systems, radar, and wireless devices, our BJT-RF transistors ensure stable operation under varying conditions. Contact us today for pricing and availability let our experts help you find the perfect solution for your RF needs!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 6GHz
- Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
- Gain: 10dB
- Power - Max: 1.8W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
- Current - Collector (Ic) (Max): 150mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: -
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