NE66219-A
CEL
CEL
RF TRANS NPN 3.3V 21GHZ SOT523
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
CEL's NE66219-A RF BJT transistors offer unmatched reliability for critical communication systems. With optimized noise figures and power handling, they excel in cellular base stations, satellite receivers, and IoT devices. Their robust construction ensures longevity even in harsh environments. Ready to integrate top-tier components? Request a quote today and let us support your RF engineering goals!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 3.3V
- Frequency - Transition: 21GHz
- Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
- Gain: 14dB
- Power - Max: 115mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 2V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-523
- Supplier Device Package: SOT-523
Related Products
onsemi
2N5770_D27Z
Texas Instruments
LM3046M/NOPB
Infineon Technologies
BFP 620F E7764
onsemi
BF240_D74Z
Infineon Technologies
BFP 196R E6501
Ampleon USA Inc.
LZ1418E100R,114
Diodes Incorporated
BFQ31ATA
onsemi
KSC1393RBU
Infineon Technologies
BF776E6327FTSA1
NXP USA Inc.