NE662M04-T2-A
Renesas
Renesas
SAME AS 2SC5508 NPN SILICON AMPL
$2.00
Available to order
Reference Price (USD)
1+
$2.00000
500+
$1.98
1000+
$1.96
1500+
$1.94
2000+
$1.92
2500+
$1.9
Exquisite packaging
Discount
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Boost your RF circuitry with NE662M04-T2-A, Renesas's premium BJT transistors tailored for high-speed switching. Key advantages include minimal intermodulation distortion and extended operational life. Widely adopted in 5G infrastructure and aerospace tech. Have questions? Send your inquiry we re here to optimize your procurement process!
Specifications
- Product Status: Last Time Buy
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 3.3V
- Frequency - Transition: 25GHz
- Noise Figure (dB Typ @ f): 1.1dB @ 2GHz
- Gain: 17dB
- Power - Max: 115mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 2V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-343F
- Supplier Device Package: M04
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