NE68819-T1-A
Renesas
Renesas
NPN SILICON AMPLIFIER AND OSCILL
$0.80
Available to order
Reference Price (USD)
1+
$0.80000
500+
$0.792
1000+
$0.784
1500+
$0.776
2000+
$0.768
2500+
$0.76
Exquisite packaging
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Simplify your RF design challenges with NE68819-T1-A from Renesas. These BJT transistors offer consistent hFE matching and low saturation voltage, essential for push-pull configurations and mixer circuits. Serving industries from marine navigation to renewable energy. Connect with our team we provide end-to-end support from selection to delivery!
Specifications
- Product Status: Last Time Buy
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 6V
- Frequency - Transition: 9GHz
- Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
- Gain: 8dB
- Power - Max: 125mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 1V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SC-75 (USM)
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