NE856M02-T1-AZ
Renesas
Renesas
SAME AS 2SC5336 NPN SILICON AMPL
$2.80
Available to order
Reference Price (USD)
1+
$2.80000
500+
$2.772
1000+
$2.744
1500+
$2.716
2000+
$2.688
2500+
$2.66
Exquisite packaging
Discount
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Engineered for excellence, Renesas's NE856M02-T1-AZ transistors redefine RF performance in the Bipolar (BJT) category. Ideal for VHF/UHF systems, these devices provide exceptional gain-bandwidth product and phase stability. Applications span from broadcast transmitters to automotive radar. Partner with us for quality components contact our sales team for personalized assistance!
Specifications
- Product Status: Last Time Buy
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 6.5GHz
- Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
- Gain: 12dB
- Power - Max: 1.2W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
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