NESG2021M16-T3-A
Renesas Electronics America Inc
Renesas Electronics America Inc
RF SMALL SIGNAL TRANSISTOR
$0.56
Available to order
Reference Price (USD)
1+
$0.56000
500+
$0.5544
1000+
$0.5488
1500+
$0.5432
2000+
$0.5376
2500+
$0.532
Exquisite packaging
Discount
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Engineered for excellence, Renesas Electronics America Inc's NESG2021M16-T3-A transistors redefine RF performance in the Bipolar (BJT) category. Ideal for VHF/UHF systems, these devices provide exceptional gain-bandwidth product and phase stability. Applications span from broadcast transmitters to automotive radar. Partner with us for quality components contact our sales team for personalized assistance!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 5V
- Frequency - Transition: 25GHz
- Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 2GHz ~ 5.2GHz
- Gain: 10dB ~ 18dB
- Power - Max: 175mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 5mA, 2V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Flat Leads
- Supplier Device Package: M16, 1208
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