NESG2030M04-A
CEL
CEL
RF TRANS NPN 2.3V 60GHZ M04
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Discover high-performance NESG2030M04-A RF Bipolar Transistors from CEL, designed for superior signal amplification in demanding applications. These transistors feature excellent high-frequency response, low noise, and reliable performance, making them ideal for RF and microwave circuits. Commonly used in communication systems, radar, and wireless devices, our BJT-RF transistors ensure stable operation under varying conditions. Contact us today for pricing and availability let our experts help you find the perfect solution for your RF needs!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 2.3V
- Frequency - Transition: 60GHz
- Noise Figure (dB Typ @ f): 0.9dB ~ 1.1dB @ 2GHz
- Gain: 16dB
- Power - Max: 80mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 5mA, 2V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-343F
- Supplier Device Package: M04
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