NESG3031M14-T3-A
Renesas Electronics America Inc
Renesas Electronics America Inc
RF SMALL SIGNAL TRANSISTOR
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Achieve peak RF performance with NESG3031M14-T3-A transistors by Renesas Electronics America Inc. These BJT components combine high breakdown voltage with superior thermal management, catering to power amplifier stages and frequency multipliers. Trusted in defense and commercial sectors alike. Take the next step inquire about customization options and lead times!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 4.3V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): 0.6dB ~ 1.5dB @ 2.4GHz ~ 5.8GHz
- Gain: 7.5dB ~ 16dB
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 6mA, 2V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: 4L2MM, M14
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