NGTB40N120IHRWG
onsemi
onsemi
IGBT 1200V 80A 384W TO247
$5.82
Available to order
Reference Price (USD)
1+
$5.20000
30+
$4.41800
120+
$3.82883
510+
$3.25941
1,020+
$2.74890
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NGTB40N120IHRWG Single IGBT by onsemi sets the standard for power semiconductor excellence. Designed for applications like electric vehicles and industrial machinery, it offers high current density and minimal thermal resistance. Key benefits include easy integration, superior durability, and compliance with international certifications. Partner with onsemi for cutting-edge solutions tailored to your needs. Contact us now to discuss specifications and delivery options!
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 40A
- Power - Max: 384 W
- Switching Energy: 950µJ (off)
- Input Type: Standard
- Gate Charge: 225 nC
- Td (on/off) @ 25°C: -/230ns
- Test Condition: 600V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
Related Products
onsemi
NGTB30N120IHSWG
STMicroelectronics
STGD7NB60KT4
onsemi
MGP20N14CL
Infineon Technologies
IRGPS40B120UDP
Rohm Semiconductor
RGCL80TS60DGC11
STMicroelectronics
STGWT80V60DF
Infineon Technologies
AIGB50N65F5ATMA1
IXYS
IXXH30N60B3
Fairchild Semiconductor
HGTG11N120CN
Infineon Technologies