NHDTC114YTVL
Nexperia USA Inc.
Nexperia USA Inc.
NHDTC114YT/SOT23/TO-236AB
$0.22
Available to order
Reference Price (USD)
1+
$0.22000
500+
$0.2178
1000+
$0.2156
1500+
$0.2134
2000+
$0.2112
2500+
$0.209
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NHDTC114YTVL by Nexperia USA Inc. is a trusted name in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single, Pre-Biased are built to meet the highest industry standards, offering reliability and efficiency. Key features include high power dissipation, stable operation, and easy integration. Widely used in computing, aerospace, and defense applications. Nexperia USA Inc. ensures top-tier performance and support. Contact us now to discuss your requirements!
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Resistor - Base (R1): 10 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 170 MHz
- Power - Max: 250 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
Related Products
Micro Commercial Co
DTA144EUA-TP
Diodes Incorporated
DDTA142TE-7
onsemi
MUN5137T1
Diodes Incorporated
DDTA114TUA-7-F
Toshiba Semiconductor and Storage
RN1104MFV,L3F
onsemi
MUN5235T1G
Rohm Semiconductor
DTA023JUBTL
Rohm Semiconductor
DTC114ECAT116
Toshiba Semiconductor and Storage
RN2108(T5L,F,T)
Diodes Incorporated