NHUMD13F
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS 1NPN 1PNP 6TSSOP
$0.05
Available to order
Reference Price (USD)
1+
$0.05172
500+
$0.0512028
1000+
$0.0506856
1500+
$0.0501684
2000+
$0.0496512
2500+
$0.049134
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Nexperia USA Inc. presents the NHUMD13F series innovative Pre-Biased BJT Arrays redefining compact circuit solutions. These transistor arrays feature carefully matched parameters and integrated biasing for plug-and-play functionality in diverse applications. Typical uses include interface circuits between different logic families, LED matrix control, and power management in IoT devices. Engineering advantages comprise low noise operation, high current capability, and excellent batch-to-batch consistency. With Nexperia USA Inc.'s global supply chain support, you'll never face stock shortages. Get detailed product information and volume discounts send your NHUMD13F inquiry today and our experts will assist you!
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 80V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 170MHz, 150MHz
- Power - Max: 350mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
Related Products
Rohm Semiconductor
EMG5T2R
Nexperia USA Inc.
PEMH2,315
Diodes Incorporated
ACX143ZUQ-7R
onsemi
NSBC123JDXV6T5G
Nexperia USA Inc.
NHUMB13X
Nexperia USA Inc.
PEMD13,115
Diodes Incorporated
DDTA114GCA-7
Rohm Semiconductor
EMB3FHAT2R
Nexperia USA Inc.
PUMH9,165
Nexperia USA Inc.