NJD35N04G
onsemi
onsemi
TRANS NPN DARL 350V 4A DPAK
$1.36
Available to order
Reference Price (USD)
1+
$0.95000
75+
$0.80880
150+
$0.66433
525+
$0.54882
1,050+
$0.43329
Exquisite packaging
Discount
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Choose NJD35N04G by onsemi for exceptional quality in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for high performance, featuring excellent current handling and stability. Ideal for use in power management and signal amplification, NJD35N04G is a versatile solution. Ready to order? Submit your inquiry today and let onsemi provide the components you need.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 350 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 20mA, 2A
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
- Power - Max: 45 W
- Frequency - Transition: 90MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
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