NJVNJD35N04G
onsemi
onsemi
TRANS NPN DARL 350V 4A DPAK
$0.63
Available to order
Reference Price (USD)
1+
$0.63341
500+
$0.6270759
1000+
$0.6207418
1500+
$0.6144077
2000+
$0.6080736
2500+
$0.6017395
Exquisite packaging
Discount
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Experience superior performance with NJVNJD35N04G from onsemi, a key player in Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single provide high gain and low power consumption, ideal for battery-operated devices. Versatile and dependable, NJVNJD35N04G is suited for a variety of electronic applications. Don't wait reach out now for more information and pricing options.
Specifications
- Product Status: Last Time Buy
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 350 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 20mA, 2A
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
- Power - Max: 45 W
- Frequency - Transition: 90MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
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