NP109N055PUK-E1-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 55V 110A TO263
$4.43
Available to order
Reference Price (USD)
1+
$4.43000
500+
$4.3857
1000+
$4.3414
1500+
$4.2971
2000+
$4.2528
2500+
$4.2085
Exquisite packaging
Discount
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Optimize your electronic systems with NP109N055PUK-E1-AY, a high-quality Transistors - FETs, MOSFETs - Single from Renesas Electronics America Inc. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, NP109N055PUK-E1-AY provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.2mOhm @ 55A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 11250 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 250W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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