NP180N04TUK-E1-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 40V 180A TO263-7
$5.41
Available to order
Reference Price (USD)
1+
$5.41000
500+
$5.3559
1000+
$5.3018
1500+
$5.2477
2000+
$5.1936
2500+
$5.1395
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of NP180N04TUK-E1-AY, a premium Transistors - FETs, MOSFETs - Single from Renesas Electronics America Inc. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, NP180N04TUK-E1-AY is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.05mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 297 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Related Products
onsemi
NTHD2110TT1G
Vishay Siliconix
IRF644STRRPBF
Harris Corporation
BUZ21
STMicroelectronics
STP10NM60ND
onsemi
FDI030N06
Infineon Technologies
BTS131E3045ANTMA1
Infineon Technologies
AUIRF1010ZSTRL
Nexperia USA Inc.
PXP015-30QLJ
Vishay Siliconix
SIHF15N65E-GE3
STMicroelectronics