NP35N04YUG-E1-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 40V 35A 8HSON
$0.78
Available to order
Reference Price (USD)
1+
$0.77989
500+
$0.7720911
1000+
$0.7642922
1500+
$0.7564933
2000+
$0.7486944
2500+
$0.7408955
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of NP35N04YUG-E1-AY, a premium Transistors - FETs, MOSFETs - Single from Renesas Electronics America Inc. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, NP35N04YUG-E1-AY is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 10mOhm @ 17.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 77W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSON
- Package / Case: 8-SMD, Flat Lead Exposed Pad
Related Products
STMicroelectronics
STW28NM60ND
Vishay Siliconix
SQJQ160E-T1_GE3
Goford Semiconductor
G110N06T
Taiwan Semiconductor Corporation
TSM180N03CS RLG
Vishay Siliconix
SIHB068N60EF-GE3
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJL03G10A-F2-0000HF
Vishay Siliconix
SIHP21N80AE-GE3
Sanyo
FW905-TL-E
Vishay Siliconix
SI3127DV-T1-GE3
Vishay Siliconix