NP60N04ILF-E1-AZ
Renesas
Renesas
NP60N04ILF-E1-AZ - SWITCHINGN-CH
$1.79
Available to order
Reference Price (USD)
1+
$1.78880
500+
$1.770912
1000+
$1.753024
1500+
$1.735136
2000+
$1.717248
2500+
$1.69936
Exquisite packaging
Discount
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Upgrade your electronic designs with NP60N04ILF-E1-AZ by Renesas, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, NP60N04ILF-E1-AZ ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta), 100W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (MP-3Z)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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