Shopping cart

Subtotal: $0.00

NSB8BT-E3/45

Vishay General Semiconductor - Diodes Division
NSB8BT-E3/45 Preview
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 8A TO263AB
$0.51
Available to order
Reference Price (USD)
1,000+
$0.53042
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 100 V
  • Capacitance @ Vr, F: 55pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D²PAK)
  • Operating Temperature - Junction: -55°C ~ 150°C

Related Products

Nexperia USA Inc.

BAS45A,113

Vishay General Semiconductor - Diodes Division

VS-SD403C08S10C

Taiwan Semiconductor Corporation

BAT42W RHG

Vishay General Semiconductor - Diodes Division

VS-STPS20L15G-M3

GeneSiC Semiconductor

1N3671AR

Diodes Incorporated

SBR3U100LP-7

Infineon Technologies

D820N22TXPSA1

Microchip Technology

JANTX1N6622US/TR

Microchip Technology

UFR3250

Micro Commercial Co

SF61G-TP

Top