NSB8JT-E3/81
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 8A TO263AB
$1.11
Available to order
Reference Price (USD)
800+
$0.65305
1,600+
$0.53042
2,400+
$0.49976
Exquisite packaging
Discount
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Streamline your power solutions with NSB8JT-E3/81 Single Rectifier Diodes from Vishay General Semiconductor - Diodes Division, a trusted name in discrete semiconductors. These diodes are perfect for high-efficiency rectification in consumer and industrial electronics. Features such as low reverse recovery time and high surge capability make them a preferred choice. Applications include LED lighting, HVAC systems, and more. Vishay General Semiconductor - Diodes Division ensures top-notch performance and reliability. Inquire today to learn how we can meet your needs!
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: 55pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
- Operating Temperature - Junction: -55°C ~ 150°C
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