NSBA143TDXV6T5G
onsemi
onsemi
TRANS PREBIAS 2PNP 50V SOT563
$0.05
Available to order
Reference Price (USD)
1+
$0.05000
500+
$0.0495
1000+
$0.049
1500+
$0.0485
2000+
$0.048
2500+
$0.0475
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Maximize circuit reliability with onsemi's NSBA143TDXV6T5G Pre-Biased Transistor Arrays, the smart choice for modern electronic designs. These BJT arrays combine multiple transistors with bias networks in single packages, offering space savings and improved thermal characteristics. Target applications span from portable electronics to industrial automation systems, particularly where stable amplification and fast switching are required. Key benefits include reduced component count, simplified assembly processes, and enhanced signal integrity. onsemi maintains strict quality control measures for all discrete semiconductor products. Interested in NSBA143TDXV6T5G specifications or evaluation boards? Complete our brief inquiry form for prompt response!
Specifications
- Product Status: Last Time Buy
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
Related Products
onsemi
MUN5331DW1T1G
Panasonic Electronic Components
UP0431100L
Toshiba Semiconductor and Storage
RN2502(TE85L,F)
Rohm Semiconductor
EMD9T2R
Nexperia USA Inc.
PUMB10,115
Nexperia USA Inc.
PBLS2001D,115
Nexperia USA Inc.
NHUMH9F
Nexperia USA Inc.
PEMD15,115
onsemi
NSBA143EDXV6T1
Panjit International Inc.