NSBC114EF3T5G
onsemi
onsemi
TRANS PREBIAS NPN 50V SOT1123
$0.37
Available to order
Reference Price (USD)
8,000+
$0.06257
16,000+
$0.05593
24,000+
$0.05261
56,000+
$0.04708
Exquisite packaging
Discount
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Choose the NSBC114EF3T5G from onsemi for your Discrete Semiconductor Products needs. These Transistors - Bipolar (BJT) - Single, Pre-Biased are designed for reliability and high performance, with features such as high current handling, low saturation, and excellent stability. Ideal for applications in medical equipment, security systems, and energy management. onsemi is your trusted partner for quality semiconductors. Inquire now for details and pricing!
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 10 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 254 mW
- Mounting Type: Surface Mount
- Package / Case: SOT-1123
- Supplier Device Package: SOT-1123
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