NSBC114YDXV6T1
onsemi
onsemi
TRANS 2NPN PREBIAS 0.5W SOT563
$0.06
Available to order
Reference Price (USD)
1+
$0.06000
500+
$0.0594
1000+
$0.0588
1500+
$0.0582
2000+
$0.0576
2500+
$0.057
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
onsemi presents the NSBC114YDXV6T1 series innovative Pre-Biased BJT Arrays redefining compact circuit solutions. These transistor arrays feature carefully matched parameters and integrated biasing for plug-and-play functionality in diverse applications. Typical uses include interface circuits between different logic families, LED matrix control, and power management in IoT devices. Engineering advantages comprise low noise operation, high current capability, and excellent batch-to-batch consistency. With onsemi's global supply chain support, you'll never face stock shortages. Get detailed product information and volume discounts send your NSBC114YDXV6T1 inquiry today and our experts will assist you!
Specifications
- Product Status: Obsolete
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
Related Products
Toshiba Semiconductor and Storage
RN2901,LF(CT
onsemi
NSBA113EDXV6T1
Diodes Incorporated
DDA114YH-7
Rohm Semiconductor
EMH52T2R
onsemi
NSBC113EPDXV6T1G
onsemi
NSBC114TDXV6T1G
Toshiba Semiconductor and Storage
RN1902,LXHF(CT
Infineon Technologies
BCR08PNH6327XTSA1
onsemi
NSBC123JPDXV6T5G
Toshiba Semiconductor and Storage